Semiconductor structure and method for forming the same

A semiconductor structure, comprising:

• an image sensor device, wherein the image sensor device comprises:
• a plurality of color filter layers formed above a first substrate;
• a first oxide layer formed below the color filter layers;
• a first bonding via formed through the first oxide layer;
• a first etching stop layer between the color filter layers and the first oxide layer, and the first bonding via is through the first etching stop layer;
• and
• a logic circuit device formed below the image sensor device, wherein the logic circuit device comprises:
• a second oxide layer formed over a second substrate;
• a second bonding via formed through the second oxide layer;
• and
• a hybrid bonding structure between the image sensor device and the logic circuit device, and the hybrid bonding structure comprises the first bonding via bonded to the second bonding via.

A semiconductor structure, comprising:

• an image sensor device, wherein the image sensor device comprises:
• a first bonding layer formed below a first substrate;
• a first dummy pad formed in the first bonding layer;
• and
• a logic circuit device formed below the image sensor device, wherein the logic circuit device comprises:
• a second bonding layer formed over a second substrate;
• a second dummy pad formed in the second bonding layer;
• and
• a hybrid bonding structure between the image sensor device and the logic circuit device, and the hybrid bonding structure comprises the first dummy pad bonded to the second dummy pad.