Semiconductor device, stacked semiconductor device and manufacturing method of semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChih-Hang Tung, Chen-Hua Yu, Tung-Liang Shao, Su-Chun Yang, Wen-Lin Shih
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Abstract
A semiconductor device includes a semiconductor substrate, a dielectric structure, an electrical insulating and thermal conductive layer and a circuit layer. The electrical insulating and thermal conductive layer is disposed over the semiconductor substrate. The dielectric structure is disposed over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure. The circuit layer is disposed in the dielectric structure.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- an electrical insulating and thermal conductive layer disposed over the semiconductor substrate;
- a dielectric structure comprising a lower dielectric layer disposed over the electrical insulating and thermal conductive layer and an upper dielectric layer disposed over the lower dielectric layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure;
- a circuit layer disposed in the dielectric structure;
- and
- an electrical insulating and thermal conductive interlayer disposed between the lower dielectric layer and the upper dielectric layer, wherein a thermal conductivity of the electrical insulating and thermal conductive interlayer is substantially greater than a thermal conductivity of the dielectric structure.
A stacked semiconductor device, comprising:
- a first semiconductor device comprising:
- a first semiconductor substrate;
- a first surface dielectric layer disposed over the first semiconductor substrate;
- a first electrical insulating and thermal conductive layer covering a first outer surface of the first surface dielectric layer, wherein a thermal conductivity of the first electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the first surface dielectric layer;
- and
- a first bonding pad disposed in the first surface dielectric layer;
- and
- a second semiconductor device disposed over and bonded to the first semiconductor device, comprising:
- a second semiconductor substrate;
- a second surface dielectric layer disposed over the second semiconductor substrate;
- a second electrical insulating and thermal conductive layer covering a second outer surface of the second surface dielectric layer and in physical contact with the first electrical insulating and thermal conductive layer, wherein a thermal conductivity of the second electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the second surface dielectric layer;
- and
- a second bonding pad disposed in the second surface dielectric layer and bonded with the first bonding pad.
A manufacturing method of a semiconductor device, comprising:
- forming an electrical insulating and thermal conductive layer over a semiconductor substrate;
- forming a lower dielectric layer of a dielectric structure over the electrical insulating and thermal conductive layer, wherein a thermal conductivity of the electrical insulating and thermal conductive layer is substantially greater than a thermal conductivity of the dielectric structure;
- forming an electrical insulating and thermal conductive interlayer over the lower dielectric layer;
- forming an upper dielectric layer of the dielectric structure over the electrical insulating and thermal conductive interlayer, wherein a thermal conductivity of the electrical insulating and thermal conductive interlayer is substantially greater than a thermal conductivity of the dielectric structure;
- forming an opening in the dielectric structure, wherein the opening extending through the dielectric structure and the electrical insulating and thermal conductive layer;
- and
- forming a circuit layer in the dielectric structure, wherein the circuit layer fills the opening.
Dependencies are inferred from the claim text.