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US 11,456,253 B2Granted
Semiconductor device and method of forming the same
AssigneeMicron Technology, Inc.
InventorsShigeru Sugioka, Hidenori Yamaguchi, Noriaki Fujiki, Keizo Kawakita, Raj K. Bansal
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Abstract
A semiconductor device includes a main circuit region; and a scribe region surrounding the main circuit region; wherein the main circuit region and the scribe region comprises first and second insulating films and a low-k film formed therebetween; and wherein the low-k film of the scribe region includes a plurality of cavities lining along a border between the main circuit region and the scribe region.
Claims7
A semiconductor device comprising:
- a main circuit region;
- and
- a scribe region surrounding the main circuit region;
- wherein the main circuit region and the scribe region comprise first and second insulating films and a low-k film formed therebetween;
- and
- wherein the scribe region includes a plurality of cavities that penetrate through the low-k film and reach partway through the first insulating film, and line along a border between the main circuit region and the scribe region.
3 more elements
Dependencies are inferred from the claim text.