Semiconductor structure, package structure, and manufacturing method thereof

A package structure, comprising:

• at least one integrated circuit component, comprising:
• a first semiconductor substrate having at least one first active device therein;
• and
• a second semiconductor substrate having at least one first capacitor embedded therein and electrically coupled to the first semiconductor substrate, wherein the second semiconductor substrate comprises first through silicon vias penetrating therethrough, the first semiconductor substrate and the second semiconductor substrate are bonded through a first hybrid bonding interface being free of the first through silicon vias;
• and
• a redistribution structure, located on and electrically coupled to the at least one integrated circuit component.

A manufacturing method of a semiconductor structure, comprising:

• forming at least one integrated circuit component, comprising:
• providing a first semiconductor substrate, a second semiconductor substrate and a third semiconductor substrate, the first semiconductor substrate, the second semiconductor substrate and the third semiconductor substrate being stacked on each other, wherein at least one of the first semiconductor substrate, the second semiconductor substrate and the third semiconductor substrate comprises at least one first embedded capacitor;
• performing a first fusion bonding step to bond the first semiconductor substrate and the second semiconductor substrate for electrically connecting the first semiconductor substrate and the second semiconductor substrate;
• and
• performing a second fusion bonding step to bond the second semiconductor substrate and the third semiconductor substrate for electrically connecting the second semiconductor substrate and the third semiconductor substrate.