Semiconductor device and fabrication method for the same

A semiconductor device, comprising:

• at least one die comprising:
• an integrated circuit region;
• a buffer region surrounding the integrated circuit region, wherein the integrated circuit region and the buffer region are integral structure and have no recess therebetween;
• a first recess region surrounding the integrated circuit region, wherein the buffer region is interposed between the first recess region and the integrated circuit region, wherein a first recess is disposed in the first recess region and surrounds the integrated circuit region;
• a second recess region surrounding the first recess region, wherein a second recess is disposed in the second recess region and surrounds the first recess region;
• a first conductive structure, wherein the first conductive structure is disposed between the first recess surrounding the integrated circuit region and the second recess surrounding the first recess region, which together form a centric structure, and the first conductive structure continuously surrounds the first recess;
• and
• a second conductive structure, wherein the second conductive structure continuously surrounds the second recess surrounding the first recess region.