US 11,456,246 B2 · Semiconductor device structure and methods of forming the same

Abstract

A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.

Claims20

Dependent claims

A semiconductor device structure, comprising:

a device;
a first dielectric material disposed over the device;
a conductive structure disposed in the first dielectric material, wherein the conductive structure includes a first sidewall;
and
a surrounding structure disposed in the first dielectric material, wherein the surrounding structure surrounds the first sidewall of the conductive structure, and the surrounding structure comprises:
a first spacer layer having a side surface and an upper surface, wherein the side surface is in contact with the first sidewall;
and
a second spacer layer disposed on and in contact with the upper surface of the first spacer layer, wherein an air gap is formed between the first spacer layer and the second spacer layer.

5 more elements

Dependencies are inferred from the claim text.

Semiconductor device structure and methods of forming the same

Life of this patent

Semiconductor device structure and methods of forming the same

Life of this patent

Abstract

Claims20