Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChen-Hua Yu, Sung-Feng Yeh, Ming-Fa Chen, Hsien-Wei Chen, Tzuan-Horng Liu
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Abstract
A semiconductor device and method of manufacture are presented in which a first semiconductor device and second semiconductor device are bonded to a first wafer and then singulated to form a first package and a second package. The first package and second package are then encapsulated with through interposer vias, and a redistribution structure is formed over the encapsulant. A separate package is bonded to the through interposer vias.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- attaching a first semiconductor device and a second semiconductor device to a first wafer;
- singulating the first wafer to form a first package and a second package;
- attaching the first package and the second package to a carrier wafer;
- simultaneously forming first through vias on the first package and second through vias on the carrier wafer;
- encapsulating the first package, the second package, the first through vias and the second through vias with an encapsulant;
- thinning the encapsulant to expose through substrate vias;
- and
- forming a redistribution structure over the encapsulant.
A method of manufacturing a semiconductor device, the method comprising:
- attaching a first package to a carrier wafer, the first package comprising:
- a first semiconductor device, wherein the first semiconductor device further comprises a through substrate via extending through the first semiconductor device;
- and
- a first semiconductor substrate;
- attaching a second package to the carrier wafer, the second package comprising:
- a second semiconductor device;
- and
- a second semiconductor substrate;
- forming through vias on each of the first semiconductor substrate, the second semiconductor substrate, and the carrier wafer, wherein each of the through vias is formed simultaneously;
- encapsulating the through vias, the first package, and the second package with an encapsulant, wherein the encapsulant is in direct physical contact with the through vias, the first package and the second package;
- and
- forming a redistribution structure over the encapsulant.
A method of manufacturing a semiconductor device, the method comprising:
- plating a conductive material into openings within a photoresist, a first one of the openings being located over a carrier substrate, a second one of the openings being located over a first semiconductor substrate, and a third one of the openings being located over a second semiconductor substrate, the conductive material on the first semiconductor substrate being adjacent to a first semiconductor device, and the conductive material on the second semiconductor substrate being adjacent to a second semiconductor device;
- replacing the photoresist with an encapsulant over the conductive material, the first semiconductor substrate and the second semiconductor substrate;
- removing a portion of the encapsulant to expose the conductive material;
- and
- forming a redistribution structure over the encapsulant and in electrical connection with the conductive material.
Dependencies are inferred from the claim text.