Integrated circuit structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon-Jhy Liaw
Life of this patent
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Abstract
An IC structure includes first and second semiconductor fins extending along a first direction; first and second gate electrodes respectively extending across channel regions of the first and second semiconductor fins along a second direction perpendicular to the first direction; first and second source/drain contacts extending across source/drain regions of the first and second semiconductor fins, respectively; and first source/drain via over the first source/drain contact, wherein a width of the second source/drain contact measured along the first direction is greater than a diameter of the first source/drain via.
Claims20
An integrated circuit (IC) structure, comprising:
- first and second semiconductor fins extending along a first direction;
- first and second gate electrodes respectively extending across channel regions of the first and second semiconductor fins along a second direction perpendicular to the first direction;
- first and second source/drain contacts extending across source/drain regions of the first and second semiconductor fins, respectively;
- and
- a first source/drain via over the first source/drain contact, wherein a width of the second source/drain contact measured along the first direction is greater than a diameter of the first source/drain via.
An integrated circuit (IC) structure, comprising:
- a first circuit comprising a plurality of first semiconductor fins, a plurality of first gate electrodes extending across the plurality of first semiconductor fins, a plurality of first gate spacers respectively surrounding the plurality of first gate electrodes from a top view, and a plurality of first source/drain contacts alternately arranged with the plurality of first gate spacers along lengthwise directions of the plurality of first semiconductor fins;
- and
- a second circuit comprising a plurality of second semiconductor fins, a plurality of second gate electrodes extending across the plurality of second semiconductor fins, a plurality of second gate spacers respectively surrounding the plurality of second gate electrodes from the top view, and a plurality of second source/drain contacts alternately arranged with the plurality of second gate spacers along lengthwise directions of the plurality of second semiconductor fins,
- wherein the plurality of second source/drain contacts are spaced apart from each of the second gate spacers, but each of the plurality of first source/drain contacts is in contact with two of the plurality of first gate spacers.
An integrated circuit (IC) structure, comprising:
- a first circuit comprising a plurality of first semiconductor fins, a first gate electrode extending across channel regions of the plurality of first semiconductor fins, a first source/drain contact extending across source/drain regions of the plurality of first semiconductor fins, a first gate via over the first gate electrode, and a first source/drain via over the first source/drain contact;
- and
- a second circuit comprising a plurality of second semiconductor fins, a second gate electrode extending across channel regions of the plurality of second semiconductor fins, a second source/drain contact extending across source/drain regions of the plurality of second semiconductor fins, a second gate via over the second gate electrode, and a second source/drain via over the second source/drain contact,
- wherein from a top view, an area ratio of the second source/drain via to the second gate via is larger than an area ratio of the first source/drain via to the first gate via.
Dependencies are inferred from the claim text.