Semiconductor stress monitoring structure and semiconductor chip
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorChien-Mao Chen
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Abstract
Present disclosure provides a semiconductor stress monitoring structure, including a substrate, first conductive segments, second conductive segments, and a sensing structure. The first conductive segments are over the substrate and arranged parallel to each other. The second conductive segments are arranged below the first conductive segments and parallel to each other. The sensing structure is proximate to the substrate. The sensing structure is configured to respond to a stress caused by the first conductive segments and the second conductive segments and generate a monitoring signal.
Claims20
A semiconductor stress monitoring structure, comprising:
- a substrate;
- a plurality of first conductive segments over the substrate, arranged parallel to each other;
- a plurality of second conductive segments arranged below the plurality of first conductive segments and parallel to each other;
- a sensing structure proximate to the substrate, configured to respond to a stress caused by the first conductive segments and the second conductive segments and generate a monitoring signal, and
- a plurality of interconnection layers arranged between the sensing structure and the plurality of second conductive segments, wherein the plurality of interconnection layers are configured to transmit the monitoring signal from the sensing structure to one of the first conductive segments or the second conductive segments.
A semiconductor chip, comprising:
- a plurality of semiconductor stress sensing structures, each of the semiconductor sensing structure comprising:
- a stress enhancement structure over a metallization of the semiconductor chip;
- and
- a sensing structure under the metallization of the semiconductor chip, configured to generate a monitoring signal in response to a stress caused by the stress enhancement structure,
- wherein adjacent stress sensing structures are electrically disconnected.
A semiconductor stress monitoring structure, comprising:
- a stress enhancement structure comprising a plurality of conductive segments arranged parallel to each other;
- and
- a sensing structure under a projection of the conductive segments, configured to generate a monitoring signal in response to a stress caused by the conductive segments,
- wherein the conductive segments comprises a plurality of first conductive segments arranged at a first layer, and the first conductive segments comprises aluminum pads.
Dependencies are inferred from the claim text.