US 11,456,215 B2Granted

Manufacturing method for semiconductor device

AssigneeNitto Denko Corporation

InventorsRyota Mita, Tomoaki Ichikawa

Life of this patent

Estimating the term…

Loading patent…

Abstract

A manufacturing method includes the step of laminating a sheet assembly onto chips arranged on a processing tape, where the sheet assembly has a multilayer structure including a base and a sinter-bonding sheet and is laminated so that the sinter-bonding sheet faces the chips, and subsequently removing the base B from the sinter-bonding sheet. The chips on the processing tape are picked up each with a portion of the sinter-bonding sheet adhering to the chip, to give sinter-bonding material layer-associated chips. The sinter-bonding material layer-associated chips are temporarily secured through the sinter-bonding material layer to a substrate. The sinter-bonding material layers lying between the temporarily secured chips and the substrate are converted through a heating process into sintered layers, to bond the chips to the substrate. The semiconductor device manufacturing method is suitable for efficiently supplying a sinter-bonding material to semiconductor chips while reducing loses of the sinter-bonding material.

Claims10

Dependent claims

A method for manufacturing a semiconductor device, the method comprising

an arrangement step of arranging a plurality of semiconductor chips on an adhesive face of a processing tape;
a transfer step of:
laminating a sheet assembly onto the plurality of semiconductor chips on the processing tape, the sheet assembly having a multilayer structure including a base and a sinter-bonding sheet and being laminated so that the sinter-bonding sheet faces the semiconductor chips;
and
removing the base of the sheet assembly from the sinter-bonding sheet;
a picking-up step of picking up each of the semiconductor chips on the processing tape together with a portion of the sinter-bonding sheet adhering to the semiconductor chip, to give sinter-bonding material layer-associated semiconductor chips;
a temporary securing step of temporarily securing the sinter-bonding material layer-associated semiconductor chips through the sinter-bonding material layers to a substrate;
and
a bonding step of converting, through a heating process, the sinter-bonding material layers lying between the temporarily secured semiconductor chips and the substrate into sintered layers, to bond the semiconductor chips to the substrate.

6 more elements

Dependencies are inferred from the claim text.

Facts

Application: 17/253,727Filed 27 Mar 2019
Priority: JP JP2018-12043626 Jun 2018
Published: US 2021/0193523 A124 Jun 2021
Granted: 27 Sep 2022
Term ends: Not estimatedThe source records don’t support an estimate.

Classification37 codes

H10P 54/00
Cutting or separating of wafers, substrates or parts of devices
H10W 72/01304
Of die-attach connectors: using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
H10P 72/0442
Apparatus for manufacture or treatment: apparatus for placing on an insulating substrate, e.g. tape
H10P 72/7402
Using temporarily an auxiliary support: wafer tapes, e.g. grinding or dicing support tapes