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US 11,456,207 B2Granted
Semiconductor device including metal interconnections having sidewall spacers thereon, and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsChing-Chih Chang, Yuan-Fu Ko, Chih-Sheng Chang
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Abstract
A method for fabricating semiconductor device includes the steps of: forming a first inter-metal dielectric (IMD) layer on a substrate; forming a first metal interconnection in the first IMD layer; removing part of the first IMD layer; forming a spacer adjacent to the first metal interconnection; forming a second IMD layer on the spacer and the first metal interconnection; and forming a second metal interconnection in the second IMD layer and on the spacer and the first metal interconnection.
Claims9
A semiconductor device, comprising:
- a first inter-metal dielectric (IMD) layer on a substrate and comprising a single layer;
- a first metal interconnection in the first IMD layer, wherein a bottom surface of the first metal interconnection is flush with a bottom surface of the first IMD layer;
- a first spacer adjacent to one side of the first metal interconnection and on the first IMD layer, wherein a bottom surface of the spacer is flush with a top surface of the first IMD layer;
- a second inter-metal dielectric (IMD) layer on the first IMD layer, wherein the second IMD layer comprises:
- a first dielectric layer covering the first spacer and a top surface of the first metal interconnection;
- a second dielectric layer on the first dielectric layer;
- and
- a third dielectric layer on the second dielectric layer;
- and
- a second metal interconnection completely through the third dielectric layer, the second dielectric layer and the first dielectric layer to directly contact the first spacer and the first metal interconnection.
7 more elements
Dependencies are inferred from the claim text.