Wafer processing apparatus and wafer processing method using the same apparatus

A wafer processing apparatus comprising:

• a heating plate through which a plurality of vacuum ports is formed, and a central region, an edge region surrounding the central region, and a middle region between the central region and the edge region are defined;
• a plurality of temperature sensors configured to measure a temperature of the heating plate;
• a heater configured to heat the heating plate;
• a first power supply, a second power supply and a third power supply configured to provide operational power to the heater;
• a first temperature controller configured to generate a first feedback temperature control signal for controlling a first power output of the first power supply based on a first measurement value of the plurality of temperature sensors;
• a second temperature controller configured to generate a second feedback temperature control signal for controlling a second power output of the second power supply based on a second measurement value of the plurality of temperature sensors;
• a third temperature controller configured to generate a third feedback temperature control signal for controlling a third power output of the third power supply based on a third measurement value of the plurality of temperature sensors;
• an electronic pressure regulator configured to regulate pressure of the plurality of vacuum ports;
• and
• a wafer chucking controller configured to control the electronic pressure regulator,
• wherein the plurality of vacuum ports comprises:
• a plurality of first vacuum ports arranged in circular symmetry with respect to the center of the heating plate;
• and
• a plurality of second vacuum ports arranged in circular symmetry with respect to the center of the heating plate and farther from the central region of the heating plate than the plurality of first vacuum ports,
• wherein the electronic pressure regulator comprises:
• a first electronic pressure regulator configured to regulate pressure of the plurality of first vacuum ports;
• and
• a second electronic pressure regulator configured to regulate pressure of the plurality of second vacuum ports, and
• wherein the wafer chucking controller is further configured to generate a first feedback pressure control signal and a second feedback pressure control signal configured to control, respectively, pressure of the first electronic pressure regulator and the second electronic pressure regulator based on the first feedback temperature control signal, the second feedback temperature control signal and the third feedback temperature control signal.

A wafer processing apparatus comprising:

• a heating plate through which a plurality of vacuum ports is formed, and a central region and an edge region surrounding the central region are defined;
• a plurality of temperature sensors configured to measure a temperature of the heating plate;
• a heater configured to heat the heating plate;
• a first power supply and a second power supply configured to provide operational power to the heater;
• a first meter and a second meter configured to measure a first power output of the first power supply and a second power output of the second power supply, respectively;
• a first temperature controller and a second temperature controller configured to generate a first feedback temperature control signal and a second feedback temperature control signal configured to control the first power output and the second power output based on measurement values of the plurality of temperature sensors;
• an electronic pressure regulator configured to regulate pressure of the plurality of vacuum ports;
• and
• a wafer chucking controller configured to control pressure of the electronic pressure regulator, and generate a feedback pressure control signal for controlling the pressure of the electronic pressure regulator based on the first power output and the second power output.