Oxide semiconductor-device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsShunpei Yamazaki, Junichiro Sakata, Hiroki Ohara
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Abstract
A semiconductor device for high power application in which a novel semiconductor material having high mass productivity is provided. An oxide semiconductor film is formed, and then, first heat treatment is performed on the exposed oxide semiconductor film in order to reduce impurities such as moisture or hydrogen in the oxide semiconductor film. Next, in order to further reduce impurities such as moisture or hydrogen in the oxide semiconductor film, oxygen is added to the oxide semiconductor film by an ion implantation method, an ion doping method, or the like, and after that, second heat treatment is performed on the exposed oxide semiconductor film.
Claims17
A semiconductor device comprising a transistor comprising:
- a gate electrode;
- a gate insulating film over the gate electrode;
- an oxide semiconductor layer over the gate insulating film;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- and
- an insulating film over the source electrode and the drain electrode and in contact with the oxide semiconductor layer,
- wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the insulating film comprises silicon and oxygen,
- wherein the oxide semiconductor layer comprises a crystal region in which a c-axis of a crystal is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer, and
- wherein a thickness of the oxide semiconductor layer is 5 nm or more and 30 nm or less.
A semiconductor device comprising a transistor comprising:
- a gate electrode;
- a gate insulating film over the gate electrode;
- an oxide semiconductor layer over the gate insulating film;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- and
- an insulating film over the source electrode and the drain electrode and in contact with the oxide semiconductor layer,
- wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the insulating film comprises silicon and oxygen,
- wherein the oxide semiconductor layer comprises a crystal region in which a c-axis of a crystal is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer, and
- wherein the crystal region exists at least at a depth of 5 nm or more and 30 nm or less in a film thickness direction from an interface of the oxide semiconductor layer and the insulating film.
A semiconductor device comprising a transistor comprising:
- a gate electrode;
- a gate insulating film over the gate electrode;
- an oxide semiconductor layer over the gate insulating film;
- a source electrode and a drain electrode electrically connected to the oxide semiconductor layer;
- and
- an insulating film over the source electrode and the drain electrode and in contact with the oxide semiconductor layer,
- wherein the oxide semiconductor layer comprises indium, gallium, and zinc,
- wherein the insulating film comprises silicon and oxygen,
- wherein the oxide semiconductor layer comprises a crystal region in which a c-axis of a crystal is aligned in a direction substantially perpendicular to a surface of the oxide semiconductor layer,
- wherein the crystal region exists at least at a depth of 5 nm or more and 30 nm or less in a film thickness direction from an interface of the oxide semiconductor layer and the insulating film,
- wherein the oxide semiconductor layer comprises a first region below the crystal region, and
- wherein crystallinity of the first region is lower than crystallinity of the crystal region.
Dependencies are inferred from the claim text.