Planarization of semiconductor devices

A method for processing a substrate, the method comprising:

• depositing a hardmask on the substrate, the substrate having top surfaces with a non-planar topography including structures defining recesses;
• etching the hardmask to remove the hardmask from top surfaces of the substrate and a portion of the recesses, a portion of the hardmask remaining in the recesses after the etching;
• applying a surface treatment to the top surfaces;
• depositing a fill material on the substrate by spin-on deposition, the surface treatment directing the fill material to fill the recesses with the fill material without adhering to the top surfaces;
• removing the surface treatment from the top surfaces;
• and
• depositing a planarizing film on the substrate by spin-on deposition, the planarizing film being deposited on the top surfaces and top surfaces of the fill material.

A method for processing a substrate, the method comprising:

• receiving a substrate having a non-planar topography including a raised region and a recessed region;
• depositing a hardmask on the substrate;
• etching the hardmask to remove the hardmask over a top surface of the raised region and from a first portion of a surface of the recessed region, a portion of the hardmask remaining on a second portion of the surface of the recessed region;
• applying a surface treatment to the top surface of the raised region and to a third portion of the surface of the recessed region, without applying the surface treatment to the hardmask remaining on the second portion of the surface of the recessed region, the surface treatment providing a dewetting surface condition for a fill material;
• depositing the fill material on the substrate by spin-on deposition such that the fill material fills the recessed region between the raised region and the surface treatment applied to the third portion of the surface of the recessed region without adhering to the surface treatment;
• removing the surface treatment;
• and
• depositing a planarizing film on the substrate by spin-on deposition, the planarizing film being deposited on the top surface of the raised region and on a top surface of the fill material.