Substrate processing method and substrate processing system
AssigneeTokyo Electron Limited
InventorsRyuichi Asako, Tatsuya Yamaguchi
Life of this patent
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Abstract
A method is provided. In the method, a substrate having a first region and a second region on a substrate surface is provided. A film deposition material to form a first chemical bond in the first region and a second chemical bond in the second region is supplied to the substrate surface. The second bond has a second bond energy lower than a first bond energy of the first chemical bond. A film is selectively formed in the first region by supplying an energy lower than the first bond energy of the first chemical bond and higher than the second bond energy of the second chemical bond.
Claims8
A method for processing a substrate, comprising:
- a) providing a substrate having a first region and a second region on a substrate surface;
- b) supplying a film deposition material to form a first chemical bond in the first region and a second chemical bond in the second region to the substrate surface, the second chemical bond having a second bond energy lower than a first bond energy of the first chemical bond;
- and
- c) selectively forming a film in the first region by supplying an energy lower than the first bond energy of the first chemical bond and higher than the second bond energy of the second chemical bond, wherein
- the first chemical bond is urea bond, and
- the second chemical bond is urethane bond.
A method for processing a substrate, comprising:
- a) providing a substrate having a first region and a second region on a substrate surface;
- b) supplying a film deposition material to form a first chemical bond in the first region and a second chemical bond in the second region to the substrate surface, the second chemical bond having a second bond energy lower than a first bond energy of the first chemical bond;
- c) selectively forming a film in the first region by supplying an energy lower than the first bond energy of the first chemical bond and higher than the second bond energy of the second chemical bond;
- and
- d) supplying a processing material to the substrate surface after the step c), the processing material processing a terminal of the first chemical bond such that another first chemical bond is further formed on the terminal of the first chemical bond, wherein
- the processing material is diamine.
A method for processing a substrate, comprising:
- a) providing a substrate having a first region and a second region on a substrate surface;
- b) supplying a film deposition material to form a first chemical bond in the first region and a second chemical bond in the second region to the substrate surface, the second chemical bond having a second bond energy lower than a first bond energy of the first chemical bond;
- c) selectively forming a film in the first region by supplying an energy lower than the first bond energy of the first chemical bond and higher than the second bond energy of the second chemical bond;
- d) supplying a processing material to the substrate surface after the step c), the processing material processing a terminal of the first chemical bond such that another first chemical bond is further formed on the terminal of the first chemical bond;
- and
- e) irradiating the substrate surface with ultraviolet light after the step d).
Dependencies are inferred from the claim text.