Plasma processing method and plasma ashing apparatus
AssigneeHitachi High-Tech Corporation
InventorsToru Ito, Masahito Mori, Tadamitsu Kanekiyo
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Abstract
Provided is a plasma processing method for selectively removing, after plasma etching using a mask having an amorphous carbon film containing boron, the amorphous carbon film using plasma from a silicon nitride film, a silicon oxide film or a tungsten film. The plasma processing method includes a removing step of removing the amorphous carbon film using plasma generated by mixed gas of O2 gas and CH3F gas, or CH2F2 gas.
Claims11
A plasma processing method for selectively plasma ashing an amorphous carbon film containing boron, to a film including a silicon nitride film, a silicon oxide film or a tungsten film, the method comprising:
- providing the amorphous carbon film on the film;
- plasma etching the film using the amorphous carbon film as a mask to generate a plasma-etched film having a pattern;
- a stabilization step before a removing step, the stabilization step being performed by setting the temperature of the sample stage to be the same as that in the removing step while supplying a mixed gas of O2 gas and CH3F gas into a processing chamber where the removing step is performed;
- and performing the removing step by selectively removing the amorphous carbon film from the plasma-etched film by plasma ashing using plasma generated by the mixed gas of O2 gas and CH3F gas, wherein a content of the boron in the amorphous carbon film is 50% or more, and wherein the plasma ashing is performed when a temperature of a sample stage, on which the plasma-etched film from which the amorphous carbon film is ashed is placed, is set to 80° C. to 120° C.
A plasma processing method for selectively plasma ashing an amorphous carbon film containing boron, to a film including a silicon nitride film or a silicon oxide film, the method comprising:
- providing the amorphous carbon film on the film;
- plasma etching the film using the amorphous carbon film as a mask to generate a plasma-etched film having a pattern;
- a stabilization step before a removing step, the stabilization step being performed by setting the temperature of the sample stage to be the same as that in the removing step while supplying a mixed gas of O2 gas and CH2F2 gas into a processing chamber where the removing step is performed;
- and performing the removing step by selectively removing the amorphous carbon film from the plasma-etched film by plasma ashing using plasma generated by the mixed gas of O2 gas and CH2F2 gas, wherein a content of the boron in the amorphous carbon film is 50% or more, and wherein, in the plasma ashing, processing pressure is set to be in a range of 250 Pa to 550 Pa, and a ratio of a flow rate of CH2F2 gas to a flow rate of the mixed gas is set to be in a range of 5% to 7.5%.
Dependencies are inferred from the claim text.