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US 11,456,181 B2Granted
Cross-bar fin formation
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Chanro Park, Ruilong Xie, Juntao Li
Life of this patent
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Abstract
A first mask layer is formed on top of a semiconductor substrate. A mandrel material is formed perpendicular to the first mask layer. A second mask layer is formed on one or more exposed surfaces of the mandrel material. The mandrel material is removed. A pattern of the first mask layer and the second mask layer is transferred into the semiconductor substrate.
Claims7
A method of forming a semiconductor structure, the method comprising:
- forming a first mask layer in a first direction on top of a semiconductor substrate;
- forming two or more mandrel material patterned perpendicular to the first direction of the first mask layer;
- forming a second mask layer on one or more exposed surfaces of the two or more mandrel material;
- forming a cut masking layer on top of and in contact with at least a portion of the two or more mandrel material, at least a portion of the second mask layer, and at least a portion of the first mask layer;
- selectively removing the two or more mandrel material and the second mask layer not covered by the cut masking layer;
- removing the cut masking layer;
- removing the two or more mandrel material;
- and
- transferring a pattern of the first mask layer and the second mask layer into the semiconductor substrate.
6 more elements
Dependencies are inferred from the claim text.