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US 11,456,180 B2Granted
Etching method
AssigneeTokyo Electron Limited
InventorsTakahiro Yokoyama, Maju Tomura, Yoshihide Kihara, Ryutaro Suda, Takatoshi Orui
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Abstract
An etching method of an exemplary embodiment involves providing a substrate in a chamber of a plasma treatment system. The substrate includes a silicon-containing film. The method further involves etching the silicon-containing film by a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen gas component and phosphorous gas component.
Claims22
A method of etching comprising:
- A) supporting a substrate on a substrate support in a chamber of a plasma treatment system, the substrate including a silicon-containing film, and the substrate support having a bottom electrode;
- B) generating plasma in the chamber from a process gas containing a halogen component and a phosphorus component;
- C) applying bias electric power to the substrate support while in the presence of the plasma in the chamber, wherein
- the bias electric power is a pulsed radio-frequency bias power or a pulsed DC voltage with negative polarity,
- the bias electric power is pulsed bias electric power and is periodically applied to the substrate support,
- each period of the pulsed bias electric power comprises a first term and a second term, a level of the pulsed bias electric power at the first term being higher than a level of the pulsed bias electric power at the second term, and
- a duty ratio of the first term in the period is in an inclusive range from 1% through 80%.
4 more elements
A method of etching comprising:
- A) supporting a substrate on a substrate support in a chamber of a plasma treatment system, the substrate including a silicon-containing film, and the substrate support having a bottom electrode;
- B) generating plasma in the chamber from a process gas containing a halogen component and a phosphorus component;
- C) applying bias electric power to the substrate support while in the presence of the plasma in the chamber, and
- alternately applying to the chamber a first phosphorus-free gas and a second phosphorus-containing gas, wherein
- the bias electric power is a pulsed radio-frequency bias power or a pulsed DC voltage with negative polarity, and
- a term during which the first phosphorus-free gas is supplied at least partially overlaps with a term during which the bias electric power is applied to the substrate support.
3 more elements
Dependencies are inferred from the claim text.