Methods for forming semiconductor device having uniform fin pitch
AssigneeApplied Materials, Inc.
InventorMin Gyu Sung
Life of this patent
Estimating the term…
Abstract
Disclosed are approaches for forming a semiconductor device. In some embodiments, a method may include providing a patterned hardmask over a substrate, and providing, from an ion source, a plasma treatment to a first section of the patterned hardmask, wherein a second section of the patterned hardmask does not receive the plasma treatment. The method may further include etching the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask.
Claims17
A method, comprising:
- providing a patterned hardmask over a substrate, wherein the patterned hardmask comprises a plurality of alternating trenches and patterning features, and wherein each of the trenches exposes an upper surface of the substrate;
- providing, from an ion source, a plasma treatment to a first section of the patterned hardmask, wherein a second section of the patterned hardmask does not receive the plasma treatment;
- and
- etching the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask, and wherein the first section of the patterned hardmask is removed without removing the second section of the patterned hardmask.
A method of forming a semiconductor device, comprising:
- providing a patterned hardmask over a substrate, wherein the patterned hardmask includes a first section and a second section, wherein the patterned hardmask comprises a plurality of alternating trenches and patterning features, and wherein each of the trenches exposes an upper surface of the substrate;
- providing a mask over the second section of the patterned hardmask;
- providing a plasma treatment through an opening of the mask, wherein the plasma treatment impacts the first section of the patterned hardmask without impacting the second section of the patterned hardmask;
- and
- performing an etch process to the substrate to form a plurality of fins in the substrate, wherein the first section of the patterned hardmask is etched faster than the second section of the patterned hardmask, and wherein the etch process removes the first section of the patterned hardmask without removing the second section of the patterned hardmask.
A fin cut method, comprising:
- providing a patterned hardmask over a substrate, wherein the patterned hardmask includes a first section and a second section, wherein the patterned hardmask comprises a plurality of alternating trenches and patterning features, and wherein each of the trenches exposes an upper surface of the substrate;
- providing a mask over the second section of the patterned hardmask;
- performing a plasma treatment through an opening of the mask, wherein the plasma treatment impacts the first section of the patterned hardmask;
- and
- performing an etch process to the substrate to form a first set of fins and a second set of fins, wherein the first section of the patterned hardmask and the first set of fins are etched faster than the second section of the patterned hardmask and the second set of fins, wherein the first set of fins is etched to a first fin height, and wherein the first fin height is less than a second fin height of the second set of fins.
Dependencies are inferred from the claim text.