Gate interface engineering with doped layer
AssigneeApplied Materials, Inc.
InventorsSteven C. H. Hung, Benjamin Colombeau, Abhishek Dube, Sheng-Chin Kung, Patricia M. Liu, Malcolm J. Bevan, Johanes F. Swenberg
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Abstract
Processing methods may be performed to produce semiconductor structures. The methods may include forming a silicon layer over a semiconductor substrate. The forming may include forming a silicon layer incorporating a dopant. The methods may include oxidizing a portion of the silicon layer while maintaining a portion of the silicon layer in contact with the semiconductor substrate. The oxidizing may drive a portion of the dopant through the silicon layer and into the semiconductor substrate.
Claims20
A method of forming a semiconductor structure, the method comprising:
- forming a silicon layer over a semiconductor substrate, wherein the forming comprises:
- forming a silicon layer incorporating a dopant;
- and
- oxidizing a portion of the silicon layer, wherein the oxidizing drives a portion of the dopant through the silicon layer and into the semiconductor substrate.
A method of forming a semiconductor structure, the method comprising:
- removing oxide from a surface of a substrate contained in a semiconductor processing chamber, wherein the substrate comprises a silicon germanium fin;
- forming a silicon layer over a semiconductor substrate, wherein the forming comprises:
- forming a silicon layer incorporating nitrogen, fluorine, or phosphorus as a dopant;
- and
- oxidizing the silicon layer to form a sacrificial oxide, wherein the oxidizing diffuses a portion of the dopant through the silicon layer and into the semiconductor substrate;
- removing the sacrificial oxide;
- delivering nitrous oxide to the substrate to form an oxygen-containing material;
- pre-treating the oxygen-containing material by contacting the substrate with a nitrogen-containing precursor;
- and
- forming a high-k dielectric material overlying the pre-treated oxygen-containing material.
A method of forming a semiconductor structure, the method comprising:
- removing a native oxide from a surface of a substrate contained in a semiconductor processing chamber, wherein the substrate comprises silicon germanium;
- forming a silicon layer over a semiconductor substrate, wherein the forming comprises:
- forming a silicon layer incorporating a dopant;
- and
- oxidizing a portion of the silicon layer to form a sacrificial oxide while maintaining a portion of the silicon layer in contact with the semiconductor substrate, wherein the oxidizing drives a portion of the dopant through the silicon layer and into the semiconductor substrate;
- and
- removing the sacrificial oxide.
Dependencies are inferred from the claim text.