Method of making a silicon carbide electronic device
AssigneeHitachi Energy Switzerland AG
InventorsGiovanni Alfieri, Vinoth Sundaramoorthy
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Abstract
A method for forming a semiconductor device includes implanting first ions and second ions into a p-type silicon carbide layer from a first main side to form an implantation layer at the first main side. The implanting is performed by plasma immersion ion implantation in which the p-type silicon carbide layer is immersed in a plasma comprising the first ions and the second ions. The first ions can be ionized aluminum atoms and the second ions are different from the first ions.
Claims23
A method for forming a semiconductor device, the method comprising:
- implanting first ions and second ions into a p-type silicon carbide layer from a first main side to form an implantation layer at the first main side, the implanting being performed by plasma immersion ion implantation in which the p-type silicon carbide layer is immersed in a plasma comprising the first ions and the second ions, the first ions being ionized aluminum atoms and the second ions being different from the first ions.
A method for forming a semiconductor device, the method comprising:
- implanting first ions and second ions into a p-type silicon carbide layer to form an implantation layer at a first main side, the implanting being performed by plasma immersion ion implantation in which the p-type silicon carbide layer is immersed in a plasma comprising the first ions and the second ions, the first ions being ionized aluminum atoms and the second ions being different from the first ions;
- and
- forming a metal layer on the first main side in contact with the implantation layer.
A method for forming a semiconductor device, the method comprising:
- positioning a p-type silicon carbide layer in an enclosing chamber;
- generating a plasma from a source comprising aluminum;
- and
- applying a negative voltage between the p-type silicon carbide layer and a ground potential to accelerate first ions and second ions in the plasma towards the p-type silicon carbide layer from the plasma surrounding the p-type silicon carbide layer at an ion energy sufficient to implant the first ions and the second ions into the p-type silicon carbide layer, the first ions being ionized aluminum atoms and the second ions being different from the first ions.
Dependencies are inferred from the claim text.