Deep trench integration processes and devices
AssigneeApplied Materials, Inc.
InventorsLan Yu, Tyler Sherwood
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Abstract
Exemplary methods of forming a semiconductor structure may include forming a liner along sidewalls of a trench defined from a first surface of a semiconductor substrate. The liner may extend along the first surface of the semiconductor substrate. The methods may include filling the trench with a dielectric material. The methods may include removing the dielectric material and the liner from the first surface of the semiconductor substrate. The methods may include forming a layer of the liner across the first surface of the semiconductor substrate and the trench defined within the semiconductor substrate.
Claims12
A method of forming a semiconductor structure, the method comprising:
- forming a liner along sidewalls of a trench defined from a first surface of a semiconductor substrate, wherein the liner extends along the first surface of the semiconductor substrate;
- filling the trench with a dielectric material;
- removing the dielectric material and the liner from the first surface of the semiconductor substrate;
- and
- forming a layer of the liner across the first surface of the semiconductor substrate and the trench defined within the semiconductor substrate.
Dependencies are inferred from the claim text.