Cleaning solution and method of cleaning wafer

A method of manufacturing a semiconductor device, comprising:

• applying a photoresist layer to a first main side of a semiconductor substrate;
• applying a first cleaning solution to a second main side of the semiconductor substrate opposing the first main side;
• selectively exposing the photoresist layer to actinic radiation,
• wherein the first cleaning solution, comprises:
• a first solvent having Hansen solubility parameters of 25>δd>13, 25>δp>3, and 30>δh>4;
• an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40> pKa>9.5;
• and
• a surfactant,
• wherein the surfactant is one or more of an ionic surfactant, a non-ionic surfactant, and combinations thereof,
• wherein the ionic surfactant is one or more selected from the group consisting of
• wherein R is a substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and
• the non-ionic surfactant has an A-X or A-X-A-X structure,
• wherein when the non-ionic surfactant has the A-X-A-X structure, A is an unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
• X includes one or more polar functional groups selected from the group consisting of —OH, ═O, —S—, —P—, —P(O2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, —SO2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO3NH—, and SO2NH, and
• wherein when the non-ionic surfactant has the A-X structure, A is a unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
• X includes one or more polar functional groups selected from the group consisting of —S—, —P—, —P(O2), —C(═O)SH, —C(═O)OH, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, —SO2—, —CN—, —SO—, —CON—, —NH—, —SO3NH—, and SO2NH.

A method of manufacturing a semiconductor device, comprising:

• applying a photoresist to a first main side of a semiconductor substrate to form a photoresist layer on the first main side of the semiconductor substrate;
• applying a first cleaning solution to a second main side of the semiconductor substrate opposing the first main side of the semiconductor substrate or an edge of the semiconductor substrate extending between the first main side and the second main side;
• applying a second cleaning solution to the second main side of the semiconductor substrate or the sidewall extending between the first main side and the second main side;
• selectively exposing the photoresist layer to actinic radiation,
• wherein the first cleaning solution, comprises:
• a first solvent having Hansen solubility parameters of 25>δd>13, 25>δp>3, and 30>δh>4;
• an acid having an acid dissociation constant, pKa, of −11<pKa<4, or a base having a pKa of 40> pKa>9.5;
• and
• a surfactant,
• wherein the surfactant is one or more of an ionic surfactant, a non-ionic surfactant, and combinations thereof,
• wherein the ionic surfactant is one or more selected from the group consisting of
• wherein R is a substituted or unsubstituted aliphatic, alicyclic, or aromatic group, and
• the non-ionic surfactant has an A-X or A-X-A-X structure,
• wherein when the non-ionic surfactant has the A-X-A-X structure, A is an unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
• X includes one or more polar functional groups selected from the group consisting of —OH, ═O, —S—, —P—, —P(O2), —C(═O)SH, —C(═O)OH, —C(═O)OR—, —O—, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, —SO2—, —CO—, —CN—, —SO—, —CON—, —NH—, —SO3NH—, and SO2NH, and
• wherein when the non-ionic surfactant has the A-X structure, A is a unsubstituted or substituted with oxygen or halogen, branched or unbranched, cyclic or non-cyclic, saturated C2-C100 aliphatic or aromatic group, and
• X includes one or more polar functional groups selected from the group consisting of —S—, —P—, —P(O2), —C(═O)SH, —C(═O)OH, —N—, —C(═O)NH, —SO2OH, —SO2SH, —SOH, —SO2—, —CN—, —SO—, —CON—, —NH—, —SO3NH—, and SO2NH, and
• the first cleaning solution is different from the second cleaning solution.