Plasma processing apparatus

A plasma processing apparatus comprising:

• a chamber;
• a supporting table configured to support a substrate in an inner space of the chamber, the supporting table including a lower electrode, and an electrostatic chuck provided on the lower electrode and having therein a plurality of heaters;
• a power feeding unit electrically connected to the lower electrode and extending downward from the lower electrode;
• a conductor pipe that is grounded and extends to surround the power feeding unit outside the chamber;
• a high frequency power source electrically connected to the power feeding unit;
• a filter device configured to prevent a high frequency power from flowing into a heater controller from the heaters;
• and
• a plurality of wirings that electrically connects the heaters and a plurality of coils of the filter device,
• wherein the filter device includes:
• the plurality of coils electrically connected to the heaters;
• a plurality of capacitors respectively connected between the plurality of coils and the ground;
• and
• a housing electrically grounded and configured to accommodate the plurality of coils,
• wherein the plurality of coils constitute a plurality of coil groups, each of the plurality of coil groups including two or more of the plurality of coils,
• as for each of the plurality of coil groups, the two or more of the plurality of coils are arranged such that winding portions of the two or more of the plurality of coils extend in a spiral shape surrounding a central axis extending in a vertical direction through a center of the chamber and turns of the winding portions are arranged sequentially and repeatedly in an axial direction in which the central axis extends, and
• the plurality of coil groups are provided coaxially to the central axis to surround the conductor pipe directly below the chamber.