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US 11,456,159 B2Granted
Plasma processing system
AssigneeXia Tai Xin Semiconductor (Qing Dao) Ltd.
InventorWoohyun Jeong
Life of this patent
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Abstract
A plasma processing system is provided. The plasma processing system includes an edge ring assembly that includes a dielectric ring and a coil. The coil is embedded within the dielectric ring. The coil generates a magnetic field that affects the ions in the proximity of the plasma sheath and in turn increases the fabrication yield of the semiconductor process.
Claims15
A plasma processing system for processing a wafer, comprising:
- an electrostatic chuck (ESC);
- and
- an edge ring assembly surrounding the ESC, the edge ring assembly comprising:
- a dielectric ring having a top surface, a bottom surface opposite the top surface, and a protrusion upward-extending from the top surface;
- and
- a coil embedded in the protrusion of the dielectric ring, the coil having a plurality of loops, each of the plurality of loops having a different distance with respect to the bottom surface of the dielectric ring;
- wherein the plurality of loops are correspondingly embedded within a plurality of dielectric layers, the plurality of dielectric layers are stacked on top of each other to form the dielectric ring.
4 more elements
A plasma processing chamber, comprising:
- an electrostatic chuck (ESC) having a step edge on a periphery, the step edge of the ESC having a step wall perpendicular to a step base;
- and
- an edge ring assembly surrounding the ESC, the edge ring assembly comprising:
- a first quartz ring surrounding the periphery of the ESC, the first quartz ring having a step edge on an inner periphery, the step edge of the first quartz ring having a step wall perpendicular to a step base;
- a second quartz ring disposed over the first quartz ring, the second quartz ring having a step edge on an inner periphery, the step edge of the second quartz ring having a step wall perpendicular to a step base;
- a dielectric ring disposed over the step base of the ESC and the step base of the first quartz ring, the dielectric ring having a step edge on an inner periphery, the step edge of the dielectric ring having a step wall perpendicular to a step base;
- a coil embedded in the dielectric ring and formed along the step wall of the dielectric ring, the coil having a plurality of loops, each loop of the plurality of loops having a different distance corresponding to the step base of the dielectric ring;
- and
- a tuning ring disposed over the step base of the dielectric ring and the step base of the second quartz ring, the tuning ring having a top surface, a bottom surface opposite the top surface, and a cavity formed along the bottom surface, the cavity capping a portion of the dielectric ring protruding from the step base of the dielectric ring.
6 more elements
Dependencies are inferred from the claim text.