Plasma processing apparatus

A plasma processing apparatus comprising:

• a processing container that defines a processing space;
• a gas supply path provided on a sidewall of the processing container, the gas supply path being configured to supply a gas to the processing space;
• a dielectric member having a facing surface that faces the processing space, and
• an antenna provided on a surface opposite to the facing surface of the dielectric member, the antenna being configured to radiate microwaves that turn the gas into plasma to the processing space through the dielectric member,
• wherein the gas supply path supplies the processing gas to the processing space through a portion of the sidewall of the processing container located below the dielectric member, and the supply path includes:
• a transport hole configured to transport the gas to a position in the sidewall spaced from an inside surface of the sidewall of the processing container, and
• an injection hole in communication with the transport hole and configured to inject the gas from the transport hole into the processing space, the injection hole opening at the inner surface of the sidewall below the dielectric member, the injection hole further having a diameter larger than that of the transport hole to introduce the gas without generating electric discharge in the injection hole or in the vicinity of the injection hole,
• wherein:
• the injection hole has a fixed diameter,
• the transport hole includes a first hole having a fixed diameter and a second hole having a fixed diameter,
• the first hole is disposed between the injection hole and the second hole, and
• a diameter of the second hole is greater than a diameter of the first hole and less than a diameter of the injection hole.