Method of predicting remaining lifetime of nonvolatile memory device and storage device performing the same

A storage device comprising:

• a nonvolatile memory device;
• and
• a storage controller processor configured to control the nonvolatile memory device,
• wherein the storage controller processor is further configured to,
• perform one or more read operations, iteratively, until read data stored in the nonvolatile memory device is successfully retrieved,
• generate a sequence class and error correction code (ECC) decoding information, the sequence class corresponding to a success read operation, the success read operation being a read operation, from among the one or more read operations, based upon which the read data is successfully retrieved,
• determine a life stage of the nonvolatile memory device based on at least one of the sequence class and the ECC decoding information,
• in response to determining that the nonvolatile memory device corresponds to a first life stage, perform a coarse prediction on a remaining lifetime of the nonvolatile memory device based on the sequence class and the ECC decoding information, and
• in response to determining that the nonvolatile memory device corresponds to a second life stage after the first life stage, perform a fine prediction on the remaining lifetime of the nonvolatile memory device based on the sequence class, the ECC decoding information and threshold voltage information of the nonvolatile memory device.

A method of predicting a remaining lifetime of a nonvolatile memory device, the method comprising:

• performing one or more read operations, iteratively, until read data stored in the nonvolatile memory device is successfully retrieved;
• generating a sequence class and error correction code (ECC) decoding information, the sequence class corresponding to a success read operation, the success read operation being a read operation, from among the one or more read operations, based upon which the read data is successfully retrieved;
• determining a life stage of the nonvolatile memory device based on at least one of the sequence class and the ECC decoding information;
• in response to determining that the nonvolatile memory device corresponds to a first life stage, performing a coarse prediction on the remaining lifetime of the nonvolatile memory device based on the sequence class and the ECC decoding information;
• and
• in response to determining that the nonvolatile memory device corresponds to a second life stage after the first life stage, performing a fine prediction on the remaining lifetime of the nonvolatile memory device based on the sequence class, the ECC decoding information and threshold voltage information of the nonvolatile memory device,
• wherein the sequence class includes an index value corresponding to the success read operation,
• wherein determining the life stage of the nonvolatile memory device includes,
• in response to determining that the index value is less than or equal to a reference index value, determining that the nonvolatile memory device corresponds to the first life stage,
• wherein performing the coarse prediction includes,
• performing the coarse prediction using the sequence class and the ECC decoding information as input data of an artificial intelligence (AI) model;
• and
• predicting the remaining lifetime of the nonvolatile memory device using the sequence class, the ECC decoding information as the input data of the AI model, and
• wherein the remaining lifetime of the nonvolatile memory device includes at least one of remaining program/erase (P/E) cycles and a remaining retention time of the nonvolatile memory device.