Variable implant and wafer-level feed-forward for dopant dose optimization

A method of forming a semiconductor device, comprising:

• providing a device substrate, the device substrate extending across a plurality of implant zones;
• forming a plurality of gate electrodes over the device substrate, wherein each of the gate electrodes is located in a respective one of the implant zones;
• measuring a gate electrode parameter of each of the gate electrodes based on a physical characteristic of that gate electrode to provide a gate electrode parameter value corresponding to each implant zone;
• determining an implant parameter value for each implant zone based on the corresponding gate electrode parameter values;
• implanting a dopant into each implant zone using the implant parameter value.

A method of forming a semiconductor device, comprising:

• providing a device substrate, the device substrate extending across a plurality of implant zones;
• forming a plurality of locations of a gate electrode over the device substrate, wherein each implant zone includes a corresponding one of the gate electrodes;
• for each gate electrode, measuring a thickness value, a gate electrode length value, and a gate electrode sidewall angle value;
• and
• determining a halo implant dose for each implant zone using the gate electrode thickness values, the gate electrode length values, and the gate electrode sidewall angle values;
• implanting a dopant into each implant zone at the halo implant dose that was determined for that implant zone.

A method of forming a semiconductor device, comprising:

• providing a device substrate, the device substrate extending across a plurality of implant zones;
• forming a plurality of patterned features over the device substrate, wherein at least one of the patterned features is located in each implant zone;
• measuring a parameter of each patterned feature based on a physical characteristic of that patterned feature to provide a parameter value corresponding to each implant zone;
• implanting a dopant into each implant zone based on the corresponding parameter value.

A method of forming a semiconductor device, comprising:

• providing a device substrate, the device substrate extending across a plurality of implant zones, each implant zone corresponding to one or more separate die locations each containing an instance of the semiconductor device;
• forming a plurality of gate electrodes over the device substrate, wherein at least one of the gate electrodes is located in each die location;
• measuring a physical characteristic of each gate electrode to provide a gate electrode parameter value corresponding to each implant zone;
• determining an implant parameter value for each implant zone based on the gate electrode parameter value corresponding to that implant zone;
• and
• implanting a dopant into each die location using the implant parameter value determined for that implant zone.

A method of forming a semiconductor device, comprising:

• providing a semiconductor substrate
• forming a plurality of gate electrodes over a semiconductor substrate;
• measuring a physical characteristic of the plurality of gate electrodes;
• determining an implant parameter value for each of a plurality of implant zones based on the measured physical characteristic;
• and
• implanting a dopant into each of the implant zones using the corresponding implant parameter value.