Predicting across wafer spin-on planarization over a patterned topography

A method for predicting a critical dimension of a layer being deposited onto a patterned substrate as part of a fabrication process, the method comprising:

• receiving substrate patterning information for the patterned substrate;
• generating a critical dimension model based, at least in part, on the substrate patterning information and layer critical dimension values;
• applying a first calibration model algorithm to the critical dimension model to calibrate the critical dimension model over a first spatial area defined by a first radius to generate a first calibrated layer thickness model;
• applying a second calibration model algorithm to the critical dimension model to calibrate the critical dimension model over a second spatial area defined by a second radius which is greater than the first radius to generate a second calibrated layer thickness model;
• calibrating the critical dimension model with the first and second calibrated layer thickness models to generate a calibrated critical dimension model;
• and
• controlling at least a portion of a planarization in the fabrication process based on the calibrated critical dimension model.