Manufacturing method of semiconductor device and semiconductor processing system
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYu-Kai Chen, Chia-Hung Chung, Ko-Bin Kao, Su-Yu Yeh, Li-Jen Wu, Zhi-You Ke, Ming-Hung Lin
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Abstract
A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.
Claims20
A method of manufacturing a semiconductor device, comprising:
- forming a photoresist layer on a substrate;
- exposing the photoresist layer to form an exposed photoresist layer;
- developing the exposed photoresist layer using a developer supplied by a developer supplying unit to form a patterned photoresist layer;
- and
- discharging an ammonia gas by-product of the developer from the developer supplying unit into a treating tool.
A method of manufacturing a semiconductor device, comprising:
- providing a lithography tool having a coating unit, an exposure unit, a development unit, wherein the development unit includes a developer supplying unit for supplying a developer, and the developer supplying unit comprises a gas outlet;
- forming a photoresist layer on a substrate in the coating unit;
- exposing the photoresist layer in the exposure unit to form an exposed photoresist layer;
- developing the exposed photoresist layer using the developer supplied by the developer supplying unit to form a patterned photoresist layer in the development unit;
- discharging an ammonia gas by-product of the developer from the development unit through the gas outlet of the developer supplying unit into a treating tool;
- retaining the ammonia gas by-product in the treating tool;
- and
- monitoring a concentration of the ammonia gas by-product.
A semiconductor processing system, comprising:
- a lithography tool, wherein the lithography tool includes a coating unit, an exposure unit, and a development unit located within a chamber of the lithography tool, the development unit comprises a developer supplying unit, and the developer supplying unit comprises a gas outlet;
- a treating tool, disposed outside the chamber of the lithography tool;
- an exhaust pipe, disposed between the lithography tool and the treating tool to connect the gas outlet of the developer supplying unit and the treating tool;
- and
- an ammonia gas monitor, located within the chamber of the lithography tool and coupled with the lithography tool, wherein the ammonia gas monitor is disposed near to the gas outlet of the developer supplying unit.
Dependencies are inferred from the claim text.