Crosslinkable compound-containing photocurable stepped substrate-coating composition

A photocurable stepped substrate-coating composition comprising:

• a compound (E) containing a partial structure (I) and a partial structure (II) that contains a hydroxy group formed by a reaction of an epoxy group with a proton-generating compound;
• a solvent (F);
• and
• a crosslinkable compound (H), wherein
• the partial structure (I) is at least one partial structure selected from the group consisting of partial structures of Formulae (1-1) to (1-5) described below, or a partial structure including a partial structure of Formula (1-6) in a combination with a partial structure of Formula (1-7) or (1-8), and
• the partial structure (II) is a partial structure of Formula (2-1) or (2-2) described below
• wherein R1, R1a, R3, and R5 are each independently a saturated C1-10 hydrocarbon group, an aromatic C6-40 hydrocarbon group, an oxygen atom, a carbonyl group, a sulfur atom, a nitrogen atom, an amide group, an amino group, or a group selected from combinations thereof, R5a and R6a are each independently a divalent group selected from a C1-10 alkylene group, a C6-40 arylene group, an oxygen atom, a carbonyl group, a sulfur atom, or combinations thereof, R2, R2a, R4, and R6 are each independently a hydrogen atom, a saturated C1-10 hydrocarbon group, an unsaturated C2-10 hydrocarbon group, an oxygen atom, a carbonyl group, an amide group, an amino group, or a group selected from combinations thereof, and are a monovalent group, R1, R1a, and R3 are a divalent group, R5 is a trivalent group, R7, R8, R9, R10, and R11 are each independently a hydrogen atom or a saturated C1-10 hydrocarbon group, n is the number of repeating units and is 1 to 10, and a dotted line is a chemical bond between adjacent atoms,
• wherein the compound (E) is selected from the group consisting of
• and
• wherein the photocurable stepped substrate-coating composition is a resist underlayer film-forming composition used in a lithography process in manufacturing of a semiconductor device.