Semiconductor device and method of manufacture
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsSih-Hao Liao, Yu-Hsiang Hu, Hung-Jui Kuo, Chen-Hua Yu
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Abstract
A method of manufacturing a semiconductor device includes forming a polymer mixture over a substrate, curing the polymer mixture to form a polymer material, and patterning the polymer material. The polymer mixture includes a polymer precursor, a photosensitizer, a cross-linker, and a solvent. The polymer precursor may be a polyamic acid ester. The cross-linker may be tetraethylene glycol dimethacrylate. The photosensitizer includes 4-phenyl-2-(piperazin-1-yl)thiazole. The mixture may further include an additive.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- placing a polymer material over a substrate, the polymer material comprising:
- a polymer precursor;
- a photosensitizer, the photosensitizer comprising 4-phenyl-2-(piperazin-1-yl)thiazole;
- a cross-linker;
- and
- a solvent;
- patterning the polymer material;
- and
- curing the polymer material at a temperature in a range of 170° C. to 230° C.
A method of manufacturing a semiconductor device, the method comprising:
- applying a polymer mixture over a substrate, the polymer mixture comprising:
- a polymer precursor;
- a solvent;
- a cross-linker, the cross-linker comprising tetraethylene glycol dimethacrylate, the polymer mixture being 2% to 10% cross-linker by weight;
- and
- a photosensitizer, the photosensitizer comprising 4-phenyl-2-(piperazin-1-yl)thiazole;
- exposing and developing at least a portion of the polymer mixture to form a dielectric layer;
- curing the dielectric layer;
- and
- forming a metallization pattern over the dielectric layer.
A semiconductor package, comprising:
- a die on a first dielectric layer;
- an encapsulant on the first dielectric layer, the encapsulant encapsulating the die;
- a through via extending through the encapsulant;
- and
- a redistribution structure over the encapsulant, the die, and the through via, the redistribution structure comprising:
- a second dielectric layer, the second dielectric layer having a tensile strength in a range of 175 MPa to 190 MPa and having a Young's modulus of 3 GPa, wherein the second dielectric layer comprises a dielectric feature extending into the encapsulant to a depth greater than 10 μm, the dielectric feature having a width in a range of 15 μm to 25 μm;
- and
- a metallization pattern on the second dielectric layer, the metallization pattern comprising a first conductive via extending through the second dielectric layer to physically and electrically couple the die and a second conductive via extending through the second dielectric layer to physically and electrically couple the through via.
Dependencies are inferred from the claim text.