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US 11,454,877 B2Granted
Extreme ultraviolet light reflective structure including nano-lattice and manufacturing method thereof
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsBenny Ku, Keith Kuang-Kuo Koai, Wen-Hao Cheng
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Abstract
An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.
Claims20
An extreme ultra violet (EUV) reflective structure, comprising:
- a substrate;
- and
- multiple pairs of a Si layer and a Mo layer,
- wherein the Si layer includes a plurality of cavities.
1 more element
An EUV collector mirror, comprising
- a substrate having a curved upper surface;
- and
- multiple pairs of a Si layer and a Mo layer disposed over the curved upper surface,
- wherein the Si layer includes a plurality of cavities.
1 more element
An EUV photo mask comprising:
- a substrate;
- a multilayer structure disposed over the substrate, the multilayer structure including multiple pairs of a Si layer and a Mo layer;
- and
- an absorption layer disposed over the multilayer structure,
- wherein the Si layer includes a plurality of cavities.
2 more elements
Dependencies are inferred from the claim text.