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US 11,454,552 B2Granted
Thermoelectric nanosensor
AssigneeNational Tsing Hua University
InventorsZong-Hong Lin, Yu-Hsiang Tsao
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Abstract
A manufacturing method for a thermoelectric nanosensor includes the following steps. A first conductive material is prepared. A plurality of tellurium nanostructures are formed on the first conductive material. A second conductive material is prepared. The second conductive material is formed on the tellurium nanostructures.
Claims10
A thermoelectric nanosensor, comprising:
- a first conductive material;
- a plurality of individual tellurium nanostructures located on the first conductive material, wherein each of the tellurium nanostructures has a top surface;
- an isolation layer located on each of the tellurium nanostructures, wherein the isolation layer has an upper surface and a lower surface, and the lower surface of the isolation layer is disposed on the top surfaces of at least some of the tellurium nanostructures;
- and
- a second conductive material individually disposed on the upper surface of the isolation layer;
- wherein the isolation layer is disposed between the first conductive material and the second conductive material.
3 more elements
Dependencies are inferred from the claim text.