Heat-insulating shield member and single crystal manufacturing apparatus having the same

A heat-insulating shield member, wherein

• the heat-insulating shield member is arranged and used between a SiC source housing and a substrate support in a single crystal manufacturing apparatus,
• wherein the single crystal manufacturing apparatus comprises
• a crystal growth container and
• a heating member arranged on an outer periphery of the crystal growth container,
• wherein the crystal growth container includes
• the SiC source housing, wherein the SiC source housing is disposed at a lower portion of the apparatus,
• the substrate support, wherein the substrate support is arranged above the SiC source housing and supports a substrate so as to face the SiC source housing,
• the heat-insulating shield member which is arranged and used between the SiC source housing and the substrate support, and
• a supporting rod which supports a center of the heat-insulating shield member from a lower side,
• wherein the single crystal manufacturing apparatus is configured to grow a single crystal from a SiC source on the substrate by sublimating the SiC source from the SiC source housing,
• wherein the heat-insulating shield member contains a low thermally conductive carbon material having thermal conductivity lower than graphite,
• the low thermally conductive carbon material consists of carbon,
• a diameter of the heat-insulating shield member is smaller than an inner diameter of the crystal growth container, and
• the heat-insulating shield member is made of a heat-insulating material having thermal conductivity of 1 to 3.25 W/m·K in at least a thickness direction at room temperature.