Crystal growing apparatus and crucible having a main body portion and a first portion having a radiation rate different from that of the main body portion

A crystal growing apparatus comprising:

• a crucible which includes a main body portion, and a first portion having a radiation rate different from that of the main body portion, and is capable of controlling a temperature of a specific region inside of the crucible during heating to a higher or lower temperature than that of other regions;
• and
• a heating unit which is positioned on the outside of the crucible and is configured to heat the crucible by radiant heat,
• wherein the first portion is at a position where the crucible and a line segment connecting a heating center of the heating unit and the specific region intersect with each other,
• a height of the first portion is within 50% of a height of the crucible,
• the specific region is one or more selected from the group consisting of an outer portion in a radial direction of a portion where a seed crystal is installed in the crucible, and a guide portion which is configured to control a flow of a raw material gas from the raw material towards the seed crystal and has a diameter decreasing from a surface of the raw material toward the seed crystal, and
• a radiation rate of the first portion is higher than a radiation rate of the main body portion.