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US 11,453,953 B2Granted
High-purity electrolytic copper
AssigneeMitsubishi Materials Corporation
InventorsYoshie Tarutani, Kenji Kubota, Kiyotaka Nakaya, Isao Arai
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Abstract
The present invention provides a high-purity electrolytic copper 10 having a Cu purity excluding gas components (O, F, S, C, and Cl) is 99.9999 mass % or more, a content of S is 0.1 mass ppm or less, and an area ratio of crystals having a (101)±10° orientation is less than 40%, when crystal orientation is measured by electron backscatter diffraction in a cross section along a thickness direction.
Claims8
A high-purity electrolytic copper,
- wherein a Cu purity excluding gas components (O, F, S, C, and Cl) is 99.9999 mass % or more,
- a content of S is 0.1 mass ppm or less,
- a content of Ag is 0.001 mass ppm or more and 0.1 mass ppm or less,
- an area ratio of crystals having a (101)±10° orientation is less than 40%, when crystal orientation is measured by electron backscatter diffraction in a cross section along a thickness direction, and
- a glossiness of a surface of the high-purity electrolytic copper is 2 or more and 4.5 or less.
2 more elements
Dependencies are inferred from the claim text.