# US 11,451,249 B2 · Radio-frequency module and communication device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,451,249 B2 - Document ID: US11451249B2 - Status: Granted - Kind: B2 - Application number: 17/239,911 - Filed: 2021-04-26 - Published: 2021-12-09 - Granted: 2022-09-20 - Earliest claimed: 2020-06-09 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Reiji Nakajima - Web page: https://patentgrep.com/patent/US11451249B2 ## CPC - H04B 1/04: Circuits - H04B 1/006: {using switches for selecting the desired band (H04B1/0057 takes precedence)} - H04B 2001/0408: {with power amplifiers} - Y02D 30/70: in wireless communication networks - H04B: TRANSMISSION - Y02D: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE ## Abstract A radio-frequency module includes a module substrate; a power amplifier; a first switch connected to an input terminal of the power amplifier; a second switch connected to an output terminal of the power amplifier; and a switch control circuit that controls the first switch and the second switch. The first switch, the second switch, and the switch control circuit are included in a semiconductor IC being integrated into a single chip. The power amplifier and the semiconductor IC are mounted on or above the module substrate. When the module substrate is viewed in a plan view, in the semiconductor IC, the switch control circuit is disposed between the first switch and the second switch. ## Claims ### Claim 1 A radio-frequency module comprising: a module substrate; a power amplifier; a first switch connected to an input terminal of the power amplifier; a second switch connected to an output terminal of the power amplifier; and a switch control circuit configured to control the first switch and the second switch, wherein the first switch, the second switch, and the switch control circuit are included in a semiconductor integrated circuit (IC) being integrated into a single chip, the power amplifier and the semiconductor IC are mounted on or above the module substrate, and when the module substrate is viewed in a plan view, in the semiconductor IC, the switch control circuit is physically positioned between the first switch and the second switch in a manner that a virtual line extending from one side of the module substrate to another side of the module substrate, as viewed in the plan view, passes through the control circuit, the first switch and the second switch. ### Claim 2 (depends on 1) The radio-frequency module of claim 1, wherein the module substrate has a first main surface and a second main surface on opposite sides of the module substrate. ### Claim 3 (depends on 2) The radio-frequency module of claim 2, further comprising: an external connection terminal disposed on the second main surface. ### Claim 4 (depends on 3) The radio-frequency module of claim 3, wherein the semiconductor IC is disposed on the second main surface. ### Claim 5 (depends on 4) The radio-frequency module of claim 4, wherein the power amplifier is disposed on or above the first main surface. ### Claim 6 (depends on 5) The radio-frequency module of claim 5, further comprising: a low noise amplifier disposed on or above the second main surface. ### Claim 7 (depends on 1) The radio-frequency module of claim 1, further comprising: an amplifier control circuit configured to control the power amplifier. ### Claim 8 (depends on 7) The radio-frequency module of claim 7, wherein the amplifier control circuit is included in the semiconductor IC. ### Claim 9 (depends on 8) The radio-frequency module of claim 8, wherein when the module substrate is viewed in the plan view, in the semiconductor IC, the switch control circuit and the amplifier control circuit are disposed between the first switch and the second switch. ### Claim 10 (depends on 2) The radio-frequency module of claim 2, further comprising: an amplifier control circuit configured to control the power amplifier, wherein the power amplifier and the amplifier control circuit are stacked on or above the first main surface. ### Claim 11 (depends on 2) The radio-frequency module of claim 2, further comprising: an impedance matching network connected between the output terminal of the power amplifier and the second switch. ### Claim 12 (depends on 11) The radio-frequency module of claim 11, wherein the impedance matching network includes an inductor disposed on or above the first main surface. ### Claim 13 A communication device comprising: an antenna; a radio-frequency (RF) signal processing circuit configured to process RF signals transmitted and received by the antenna; and a RF module configured to transmit the RF signals between the antenna and the RF signal processing circuit, wherein the RF module includes a module substrate; a power amplifier; a first switch connected to an input terminal of the power amplifier; a second switch connected to an output terminal of the power amplifier; and a switch control circuit configured to control the first switch and the second switch, the first switch, the second switch, and the switch control circuit are included in a semiconductor integrated circuit (IC) being integrated into a single chip, the power amplifier and the semiconductor IC are mounted on or above the module substrate, and when the module substrate is viewed in a plan view, in the semiconductor IC, the switch control circuit is physically positioned between the first switch and the second switch in a manner that a virtual line extending from one side of the module substrate to another side of the module substrate, as viewed in the plan view, passes through the control circuit, the first switch and the second switch. ### Claim 14 A radio-frequency module comprising: a module substrate having a first main surface and a second main surface on opposite sides of the module substrate; a power amplifier disposed on the first main surface; a first switch connected to an input terminal of the power amplifier; a second switch connected to an output terminal of the power amplifier; and a switch control circuit configured to control the first switch and the second switch, wherein the first switch, the second switch, and the switch control circuit are included in a semiconductor integrated circuit (IC) disposed on the second main surface. ### Claim 15 (depends on 14) The radio-frequency module of claim 14, wherein when the module substrate is viewed in a plan view, the switch control circuit is disposed between the first switch and the second switch. ### Claim 16 (depends on 14) The radio-frequency module of claim 14, further comprising: an external connection terminal disposed on the second main surface. ### Claim 17 (depends on 14) The radio frequency module of claim 14, further comprising: a low noise amplifier disposed on or above the second main surface. ### Claim 18 (depends on 14) The radio frequency module of claim 14, further comprising: an amplifier control circuit configured to control the power amplifier, wherein the amplifier control circuit is included in the semiconductor IC, and when the module substrate is viewed in the plan view, the switch control circuit and the amplifier control circuit are disposed between the first switch and the second switch. ### Claim 19 (depends on 14) The radio-frequency module of claim 14, further comprising: an amplifier control circuit configured to control the power amplifier, wherein the power amplifier and the amplifier control circuit are stacked on or above the first main surface. ### Claim 20 (depends on 14) The radio-frequency module of claim 14, further comprising: an impedance matching network connected between the output terminal of the power amplifier and the second switch, wherein the impedance matching network includes an inductor disposed on or above the first main surface.