# US 11,451,195 B2 · Amplifying apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 11,451,195 B2 - Document ID: US11451195B2 - Status: Granted - Kind: B2 - Application number: 16/868,842 - Filed: 2020-05-07 - Published: 2020-11-12 - Granted: 2022-09-20 - Earliest claimed: 2019-05-08 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Makoto Tabei - Web page: https://patentgrep.com/patent/US11451195B2 ## CPC - H03F 1/223: {with MOSFET's} - H03F 1/342: {in field-effect transistor amplifiers} - H03F 1/565: {using inductive elements} - H03F 3/195: in integrated circuits - H03F 2200/129: there being a feedback over the complete amplifier - H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier - H03F 2200/294: the amplifier being a low noise amplifier [LNA] - H03F 2200/451: the amplifier being a radio frequency amplifier - H03F: AMPLIFIERS ## Abstract An amplifying apparatus includes a transistor arranged on a substrate and constituting an amplifier, an input terminal for inputting a high-frequency signal to the amplifier, an output terminal for outputting the high-frequency signal amplified by the amplifier, a first inductor formed in or on the substrate and connected between a source of the transistor and a ground, and a second inductor formed in or on the substrate and connected between a gate of the transistor and the input terminal. When the substrate is viewed in a plan view, the first inductor and the second inductor do not overlap each other. The first inductor and the second inductor are magnetically coupled to each other. ## Claims ### Claim 1 An amplifying apparatus, comprising: a transistor arranged on a substrate and constituting an amplifier; an input terminal for inputting a high-frequency signal to the amplifier; an output terminal for outputting the high-frequency signal amplified by the amplifier; a first inductor provided in or on the substrate and connected between a source of the transistor and a ground; and a second inductor provided in or on the substrate and connected between a gate of the transistor and the input terminal, wherein when the substrate is viewed in a plan view, the first inductor and the second inductor do not overlap each other, and in a region surrounded by a wiring conductor located at an outermost periphery of the first or second inductor, there is no wiring conductor constituting another inductor. ### Claim 2 (depends on 1) The amplifying apparatus according to claim 1, wherein the first inductor and the second inductor are magnetically coupled to each other. ### Claim 3 (depends on 1) The amplifying apparatus according to claim 1, wherein at least one of the first inductor and the second inductor is substantially spiral-shaped. ### Claim 4 (depends on 3) The amplifying apparatus according to claim 3, wherein the first inductor is substantially spiral-shaped, and an inner peripheral end of the first inductor is connected to the source of the transistor and an outer peripheral end of the first inductor is connected to the ground. ### Claim 5 (depends on 3) The amplifying apparatus according to claim 3, wherein the second inductor is substantially spiral-shaped, and an inner peripheral end of the second inductor is connected to the gate of the transistor and an outer peripheral end of the second inductor is connected to the input terminal. ### Claim 6 (depends on 1) The amplifying apparatus according to claim 1, further comprising: a third inductor provided in or on the substrate and connected between the gate of the transistor and the ground, wherein when the substrate is viewed in a plan view, the first inductor and the third inductor do not overlap each other. ### Claim 7 (depends on 6) The amplifying apparatus according to claim 6, wherein the first inductor and the third inductor are magnetically coupled to each other. ### Claim 8 (depends on 6) The amplifying apparatus according to claim 6, wherein the third inductor is substantially spiral-shaped. ### Claim 9 (depends on 8) The amplifying apparatus according to claim 8, wherein an inner peripheral end of the third inductor is connected to the gate of the transistor and an outer peripheral end of the third inductor is connected to the ground. ### Claim 10 (depends on 1) The amplifying apparatus according to claim 1, further comprising: a first capacitor connected in parallel to the second inductor. ### Claim 11 (depends on 10) The amplifying apparatus according to claim 10, wherein a resonant frequency of a resonance circuit constituted by the second inductor and the first capacitor is outside a higher side of an operation frequency band of the amplifier constituted by the transistor. ### Claim 12 (depends on 6) The amplifying apparatus according to claim 6, further comprising: a second capacitor connected in series to the third inductor. ### Claim 13 (depends on 12) The amplifying apparatus according to claim 12, wherein a resonant frequency of a resonance circuit constituted by the third inductor and the second capacitor is outside a lower side of an operation frequency band of the amplifier constituted by the transistor. ### Claim 14 (depends on 2) The amplifying apparatus according to claim 2, wherein at least one of the first inductor and the second inductor is substantially spiral-shaped. ### Claim 15 (depends on 2) The amplifying apparatus according to claim 2, further comprising: a third inductor provided in or on the substrate and connected between the gate of the transistor and the ground, wherein when the substrate is viewed in a plan view, the first inductor and the third inductor do not overlap each other. ### Claim 16 (depends on 3) The amplifying apparatus according to claim 3, further comprising: a third inductor provided in or on the substrate and connected between the gate of the transistor and the ground, wherein when the substrate is viewed in a plan view, the first inductor and the third inductor do not overlap each other. ### Claim 17 (depends on 4) The amplifying apparatus according to claim 4, further comprising: a third inductor provided in or on the substrate and connected between the gate of the transistor and the ground, wherein when the substrate is viewed in a plan view, the first inductor and the third inductor do not overlap each other. ### Claim 18 (depends on 5) The amplifying apparatus according to claim 5, further comprising: a third inductor provided in or on the substrate and connected between the gate of the transistor and the ground, wherein when the substrate is viewed in a plan view, the first inductor and the third inductor do not overlap each other. ### Claim 19 (depends on 7) The amplifying apparatus according to claim 7, wherein the third inductor is substantially spiral-shaped. ### Claim 20 (depends on 2) The amplifying apparatus according to claim 2, further comprising: a first capacitor connected in parallel to the second inductor.