Emitter array that includes inhomogeneous emitter distribution to flatten a beam profile of the emitter array
AssigneeLumentum Operations LLC
InventorsXiaohua Lou, Delai Zhou, Hery Djie
Life of this patent
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Abstract
A vertical cavity surface emitting laser (VCSEL) array may comprise a first subset of VCSELs of a plurality of VCSELs, and a second subset of VCSELs of the plurality of VCSELs. One or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, may have different patterns of areas of energy intensity. The different patterns of areas of energy intensity may include respective areas of high energy intensity and respective areas of low energy intensity.
Claims20
A vertical cavity surface emitting laser (VCSEL) array, comprising:
- a first subset of VCSELs of a plurality of VCSELs;
- and
- a second subset of VCSELs of the plurality of VCSELs,
- wherein one or more first beams to be emitted by the first subset of VCSELs, when the VCSEL array is powered, and one or more second beams to be emitted by the second subset of VCSELs, when the VCSEL array is powered, have different patterns of areas of energy intensity,
- wherein the different patterns of areas of energy intensity include respective areas of high energy intensity and respective areas of low energy intensity, and
- wherein a beam to be emitted by the VCSEL array has an energy intensity profile that is more uniform relative to a first energy intensity profile of the one or more first beams to be emitted by the first subset of VCSELs alone and a second energy intensity profile of the one or more second beams to be emitted by the second subset of VCSELs alone.
A method of forming a vertical cavity surface emitting laser (VCSEL) array, comprising:
- forming a first subset of VCSELs of a plurality of VCSELs on or within a substrate,
- wherein forming the first subset of VCSELs includes forming the first subset of VCSELs such that the first subset of VCSELs is configured to output a first pattern of areas of energy intensity;
- and
- forming, in association with forming the first subset of VCSELs, a second subset of VCSELs of the plurality of VCSELs on or within the substrate,
- wherein forming the second subset of VCSELs includes forming the second subset of VCSELs such that the second subset of VCSELs is configured to output a second pattern of areas of energy intensity that is different than the first pattern of areas of energy intensity, and
- wherein the first subset of VCSELs and the second subset of VCSELs are formed such that a beam to be emitted by the VCSEL array has an energy intensity profile that is more uniform relative to a first energy intensity profile of a one or more first beams to be emitted by the first subset of VCSELs alone and a second energy intensity profile of a one or more second beams to be emitted by the second subset of VCSELs alone.
An emitter array, comprising:
- a first subset of emitters of a plurality of emitters;
- and
- a second subset of emitters of the plurality of emitters,
- wherein one or more first beams to be emitted by the first subset of emitters, when the emitter array is powered, and one or more second beams to be emitted by the second subset of emitters, when the emitter array is powered, have different patterns of areas of energy intensity,
- wherein the different patterns of areas of energy intensity include respective areas of high energy intensity and respective areas of low energy intensity that overlap with each other at least partially in a far field of the emitter array, and
- wherein a beam to be emitted by the emitter array has an energy intensity profile that is more uniform relative to a first energy intensity profile of the one or more first beams to be emitted by the first subset of emitters alone and a second energy intensity profile of the one or more second beams to be emitted by the second subset of emitters alone.
Dependencies are inferred from the claim text.