Micron-scale monocrystal film

A micron-scale monocrystal film, comprising

• a substrate layer;
• and
• a micron-scale monocrystal film layer located on the substrate layer, wherein
• a transition layer is interposed between the substrate layer and the micron-scale monocrystal film layer, and
• the transition layer includes a first transition layer disposed adjacent to the substrate layer and a second transition layer disposed adjacent to the micron-scale monocrystal film layer, wherein
• the transition layer includes H and an element of at least one kind of plasma gases used during plasma bonding of the substrate layer and the micron-scale monocrystal film layer, wherein
• both the first transition layer and the second transition layer include H, wherein
• the concentration of H in the transition layer ranges from 1×1020 to 1×1022 atoms/cc, and wherein
• the concentration of H has a maximum value in the transition layer, and from the position with maximum value, the concentration of H gradually decreases toward the micron-scale monocrystal film layer and the substrate layer.