Image sensor and method of manufacturing same

An image sensor, comprising:

• a semiconductor substrate including a plurality of pixel regions separated by an isolation region and having a first surface and an opposing second surface, wherein the second surface receives incident light;
• a plurality of color filters respectively disposed on the second surface of the semiconductor substrate to correspond to the plurality of pixel regions;
• a cover insulating layer disposed on the second surface of the semiconductor substrate and covering the plurality of color filters;
• a plurality of first transparent electrodes disposed on the cover insulating layer and spaced apart to respectively overlap the plurality of color filters;
• an isolation pattern disposed on the cover insulating layer between the plurality of first transparent electrodes and having a trench spaced apart from the plurality of first transparent electrodes;
• a drain electrode disposed in the trench of the isolation pattern;
• and
• an organic photoelectric layer and a second transparent electrode sequentially disposed on the plurality of first transparent electrodes and the isolation pattern.