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US 11,448,955 B2Granted
Mask for lithography process and method for manufacturing the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Hung Liao, Yueh-Lin Yang
Life of this patent
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Abstract
A mask includes a substrate, a light-reflecting structure, a patterned layer, and a plurality of bumps. The substrate has a first surface and a second surface. The light-reflecting structure is located on the first surface of the substrate. The patterned layer is located on the light-reflecting structure. The bumps are located on the second surface of the substrate. The bumps define a plurality of voids therebetween and protrude in a direction away from the second surface of the substrate.
Claims20
A mask comprising:
- a substrate having a first surface and a second surface;
- a light-reflecting structure on the first surface of the substrate;
- a patterned layer on the light-reflecting structure;
- a plurality of bumps on the second surface of the substrate, wherein the substrate and the bumps are defined by a low coefficient of thermal expansion (CTE) material that is a single piece and continuous throughout, the bumps define a plurality of voids therebetween and protrude in a direction away from the second surface of the substrate, the bumps are interconnected by a plurality of flat segments of the second surface of the substrate within the plurality of voids, and the bumps are in a concentric-circle distribution, and a width of each of the bumps ranges between about 1 mm to about 3 mm;
- and
- a protecting layer covering the bumps, but not the flat segments of the second surface of the substrate.
3 more elements
A mask comprising:
- a substrate having opposite first and second surfaces and a plurality of recesses in the second surface of the substrate;
- a light-reflecting structure;
- a first bump and a second bump protruding from the second surface of the substrate, wherein the first bump and the second bump are spaced apart by at least one of the recesses, the first bump and the second bump are in a concentric-circle distribution, a pitch of the first bump and the second bump ranges between about 1 mm to about 3 mm, a thickness of the mask ranges between about 5 mm to about 10 mm, and a ratio of the pitch of the first bump and the second bump to the thickness of the mask is in a range between about 1/10 and about ⅗, the first bump and the second bump are interconnected by a flat segment of the second surface of the substrate within said at least one of the recesses, and a width of each of the first bump and the second bump ranges between about 1 mm to about 3 mm;
- a patterned layer, wherein the substrate and the patterned layer are respectively located on two opposite sides of the light-reflecting structure, and the first surface of the substrate faces the light-reflecting structure;
- and
- a protecting layer covering the first bump and the second bump, but not the flat segment of the second surface of the substrate.
3 more elements
A photolithography method, comprising:
- holding a mask that includes a substrate using a chuck, wherein the mask has a plurality of recesses in a surface of the mask facing the chuck, each of the recesses has a flat segment spaced apart from the chuck, and at least one particle is present in at least one of the recesses and is spaced apart from the flat segment of said at least one of the recesses when the mask is held using the chuck, the recesses are defined between a plurality of bumps, respectively, that are formed on the substrate, wherein the substrate and the bumps are defined by a low coefficient of thermal expansion (CTE) material that is a single piece and continuous throughout and a ratio of a pitch of the bumps to a thickness of the mask is in a first range between about 1/10 and about ⅗, the bumps are interconnected by the flat segments of the surface of the substrate within the plurality of recesses, a width of the bumps ranges between about 1 mm to about 3 mm, and the mask further comprises a protecting layer covering the bumps, but not the flat segments of the surface of the substrate;
- determining a distribution of the bumps based on a pattern existing at a surface of the chuck that contacts the mask prior to holding the mask using the chuck such that the bumps are correspondingly located in accordance with the pattern of the chuck;
- generating extreme ultraviolet (EUV) radiation using an EUV light source;
- and
- directing the EUV radiation toward the mask, such that the EUV radiation is reflected by the mask.
2 more elements
Dependencies are inferred from the claim text.