Devices with semiconductor hyperbolic metamaterials
AssigneeThe Government of the United States of America, as represented by the Secretary of the Navy
InventorMichael A. Mastro
Life of this patent
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Abstract
A hyperbolic metamaterial assembly comprising alternating one or more first layers and one or more second layers forming a hyperbolic metamaterial, the one or more first layers comprising an intrinsic or non-degenerate extrinsic semiconductor and the one or more second layers comprising a two-dimensional electron or hole gas, wherein one of in-plane or out-of-plane permittivity of the hyperbolic metamaterial assembly is negative and the other is positive.
Claims18
A hyperbolic metamaterial assembly comprising a hyperbolic metamaterial in which one of an in-plane or an out-of-plane permittivity of the hyperbolic metamaterial is negative and the other is positive;
- wherein the hyperbolic metamaterial comprises a plurality of repeating superlattice structures on a substrate, each superlattice structure comprising a first dielectric layer, a second dielectric layer, and a metallic layer disposed between the first and second dielectric layers;
- wherein the first and second dielectric layers in each superlattice structure comprise first and a second low-doped semiconductor materials, the first low-doped semiconductor material being different from the second low-doped semiconductor material;
- and
- wherein each of the metallic layers comprises a two-dimensional electron or hole gas having a predetermined electron or hole concentration formed at an interface between the first and second low-doped semiconductor material layers;
- wherein a doping level and a bandgap of each of the first and second low-doped semiconductor material layers are engineered to produce a predetermined electron or hole concentration in the corresponding two-dimensional electron or two-dimensional hole gas;
- and
- wherein the electron or hole concentration in each of the two-dimensional electron or hole gas layers produces a predetermined optical response in the metamaterial assembly.
Dependencies are inferred from the claim text.