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US 11,448,614 B2Granted
Nanoscale granularity field effect transistor array
AssigneeInternational Business Machines Corporation
InventorsSufi Zafar, Steven J. Holmes, Bruce B. Doris
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Abstract
An electrochemical sensor array includes a thermal oxide configured to interface with one or more analytes. There is a transistor device layer that includes a plurality of field effect transistors (FETs) on top of the thermal oxide. A contact and wiring structure layer is on top of the transistor device layer and operative to couple to control nodes of each of the plurality of FETs. The contact and wiring structure are on a side opposite to that of the thermal oxide.
Claims9
An electrochemical sensor array, comprising:
- a thermal oxide configured to interface with one or more analytes;
- a transistor device layer comprising a plurality of field effect transistors (FETs) on top of the thermal oxide;
- and
- a contact and wiring structure layer on top of and in contact with a bottom surface of the transistor device layer and operative to couple to control nodes of each of the plurality of FETs, wherein the contact and wiring structure are on a side opposite to that of the thermal oxide with respect to the transistor device layer.
1 more element
Dependencies are inferred from the claim text.