Methods and apparatuses for microscopy and spectroscopy in semiconductor systems

Abstract

A defect detection and imaging system is presented for performing microscopy and/or spectroscopy on a device under test. The defect detection system comprises a controller for toggling the state of a light source, which may allow for fast simultaneous high-speed inspection and high-resolution review imaging of the device under test by the same system and simultaneously deliver inspection, computer generated reconstructions or tomography, and defect review on sub second time-scales. The defect detection system further comprises a converter for converting X-ray images of the device under test into photoelectron contrast images to achieve nanometer scale measurement resolution in non-destructive and real-time fashion, to complement or replace destructive TEM. These photoelectron contrast images may be received by a detector to output an electronic format map or 3D/4D image that indicates one or more features of the device under test.

Dependencies are inferred from the claim text.