Manufacturing method for solar cell, solar cell, and solar cell manufacturing apparatus

A manufacturing method for a solar cell, the method comprising:

• mounting a semiconductor substrate on a mount provided in a film forming chamber while bringing a second main surface of the semiconductor substrate into contact with the mount;
• and
• forming a thin film on a first main surface and a side surface of the semiconductor substrate by a CVD method while evacuating and decompressing the film forming chamber and supplying a source gas into the film forming chamber, wherein
• the mount includes:
• a third main surface on which the semiconductor substrate is mounted;
• a fourth main surface opposite the third main surface;
• and
• a through hole,
• the through hole includes:
• a first opening on one end side of the mount in a first region of the third main surface, the first region being a region where the second main surface of the semiconductor substrate is brought into contact, the first opening being the opening of the through hole in the first contact surface of the mount, wherein the through hole is the only through hole of the mount in the first contact surface of the mount, and the first opening is the only opening of the through hole in the first contact surface of the mount;
• and
• a second opening on the other side of the mount on the fourth main surface and opened into the film forming chamber,
• at the mounting the semiconductor substrate, the semiconductor substrate is mounted on the mount so that the second main surface of the semiconductor substrate closes the first opening,
• the CVD method causes a warping force on the semiconductor substrate directed away from the third main surface of the mount at a center of the second contact surface of the semiconductor, and
• the forming of the thin film is performed by bringing the second main surface of the semiconductor substrate into contact with the third main surface of the mount, by the evacuating and decompressing of the film forming chamber exerting a force countering the warping force on the semiconductor substrate, and forming the thin film on the first main surface and the side surface of the semiconductor substrate excluding the second main surface of the semiconductor substrate.