Method for controlling a plasma process

A method for controlling a plasma process in a plasma processing chamber comprising:

• forming a plasma from a process gas present inside the plasma processing chamber, the plasma processing chamber comprising a tunable circuit element connected between an RF filter and a resistive heating element;
• detecting a characteristic of a match circuit coupled to the plasma processing chamber, the characteristic being at least one of voltage and current;
• and
• adjusting a position of the tunable circuit element along a grounded busbar plate to adjust a position of a node and a distance between the tunable circuit element and the RF filter along a lead to adjust an impedance of the tunable circuit element, wherein the tunable circuit element has a first end directly electrically connected to the lead at the node between the resistive heating element and the RF filter and a second end coupled to the grounded busbar plate, wherein adjusting the position of the tunable circuit element comprises moving the tunable circuit element from one of a plurality of apertures disposed along a length of the grounded busbar plate to another of the plurality of apertures along the length of the busbar plate.