Deposition of low-κ films

A method of depositing a film, the method comprising:

• exposing a substrate to a silicon precursor of general formulae (Ia), (Ib), or (Ic)
• wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl, X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O) to form a silicon-containing film;
• exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate;
• and
• exposing the substrate to one or more of a strong oxidant or oxygen (O2) plasma, the strong oxidant selected from one or more of ozone (O3) and water (H2O).

A method of forming a nanolaminate, the method comprising:

• a first deposition cycle comprising:
• exposing a substrate to a first silicon precursor of general formulae (Ia), (Ib), or (Ic):
• wherein R1, R2, R3, R4, R5, R6, R7, and R8 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, and substituted or unsubstituted vinyl to form a silicon-containing film, and
• exposing the substrate to an oxidant to react with the silicon-containing film to form one or more of a silicon oxycarbide (SiOC) film or a silicon oxycarbonitride (SiOCN) film on the substrate;
• and
• a second deposition cycle comprising:
• exposing the substrate with one or more of the silicon oxycarbide (SiOC) film or the silicon oxycarbonitride (SiOCN) film thereon to a second silicon precursor having general formula (IXI) or general formula (X)
• wherein X is silicon (Si) or carbon (C), Y is carbon (C) or oxygen (O), R9, R10, R11, R12 R13, R14, R15, and R16 are independently selected from hydrogen (H), substituted or unsubstituted alkyl, substituted or unsubstituted alkoxy, substituted or unsubstituted vinyl, silane, substituted or unsubstituted amine, or halide to deposit a second silicon-containing film on the substrate, and
• exposing the substrate to a plasma to react with the second silicon-containing film to form one or more of a silicon oxycarbide (SiOC) nanolaminate or a silicon oxycarbonitride (SiOCN) nanolaminate on the substrate.