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US 11,447,864 B2Granted
Layer forming method and apparatus
AssigneeASM IP Holding B.V.
InventorJeroen Fluit
Life of this patent
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Abstract
There is provided a method and apparatus to deposit a molybdenum comprising layer on a substrate by supplying a precursor comprising molybdenum(VI) dichloride dioxide and a first reactant comprising boron and hydrogen to the substrate in a reaction chamber to react and form the molybdenum layer. The first reactant comprising boron and hydrogen may be diborane.
Claims20
A method of depositing a molybdenum comprising layer on a substrate in a reaction chamber, the method comprising:
- forming a seed layer comprising the steps of:
- supplying a precursor comprising molybdenum (VI) dichloride dioxide (MoO2Cl2) to the substrate in the reaction chamber;
- and,
- supplying a first reactant to the substrate in the reaction chamber to let a portion of the precursor and the first reactant react to form the seed layer, wherein the first reactant comprises boron and hydrogen and hydrogen (H2);
- and
- forming a bulk layer comprising the steps of:
- supplying the precursor comprising molybdenum (VI) dichloride dioxide (MoO2Cl2) to the substrate in the reaction chamber;
- and,
- supplying a second reactant comprising hydrogen (H2) to the substrate in the reaction chamber, wherein a portion of the precursor and the reactant react to form the bulk molybdenum layer.
6 more elements
Dependencies are inferred from the claim text.